SI5933DC - Vishay Siliconix

SI5933DC Dual P-Channel MOSFET

Dual P-Channel 1.8 V (G-S) MOSFET Si5933DC Vishay Siliconix PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.110 at VGS = - 4.5 V 0.160 at VGS = - 2.5 V 0.240 at VGS = - 1.8 V ID (A) - 3.6 - 3.0 - 2.4 Qg (Typ.) 5.1 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code DC XX Lot Traceability and Date Code Part # Code FEATURES • Halogen-free According to I.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC S1 S2 G1 G2 Bottom View Ordering Information: Si5933DC-T1-E3 (Lead (Pb)-free) Si5933DC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction a.