RJK6006DPP-E0 - Renesas

RJK6006DPP-E0 N-Channel Power MOSFET

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Features

 Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
 High speed switching R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25C) Value 600 30 5 15 5 15 5 1.36 29 4.31 150
  –55 to +150 Unit V V A A A A A mJ W C/W C C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Aval.