www.DataSheet4U.com RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 3 Absolute Maximum Ratings (Ta = 25°C) Ite.
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A)
4 1. 2. 3. 4. Gate Drain Source Drain 2, 4
1 12 3
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6002DPE |
Renesas |
MOS FET | |
2 | RJK6002DPH-E0 |
Renesas |
MOS FET | |
3 | RJK6002DJE |
Renesas |
MOS FET | |
4 | RJK6006DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | RJK6006DPP-A0 |
Renesas |
Power MOSFET | |
6 | RJK6006DPP-E0 |
Renesas |
N-Channel Power MOSFET | |
7 | RJK6009DPP |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | RJK6011DJA |
Renesas |
High Speed Power Switching MOS FET | |
9 | RJK6011DJE |
Renesas |
N-Channel Power MOSFET | |
10 | RJK6012DPE |
Renesas |
N-Channel Power MOSFET | |
11 | RJK6012DPP |
Renesas |
N-Channel Power MOSFET | |
12 | RJK6012DPP-A0 |
Renesas |
High Speed Power Switching MOSFET |