RJK6006DPP-A0 600V - 5A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Quality grade: Standard Outline RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 12 3 G S Datasheet R07DS1432EJ0100 Rev.1.00 Mar.10.2021 1. Gate .
Low on-resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C)
Low leakage current
High speed switching
Quality grade: Standard
Outline
RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA)
D
12 3
G S
Datasheet
R07DS1432EJ0100 Rev.1.00
Mar.10.2021
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
(Ta = 25 C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
30
V
Drain current
ID Notes4
5
A
Drain peak current
ID (pulse)Notes1
15
A
Body-drain diode reverse drain current
IDR
5
A
Body-drain diode.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6006DPP-E0 |
Renesas |
N-Channel Power MOSFET | |
2 | RJK6006DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | RJK6002DJE |
Renesas |
MOS FET | |
4 | RJK6002DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | RJK6002DPE |
Renesas |
MOS FET | |
6 | RJK6002DPH-E0 |
Renesas |
MOS FET | |
7 | RJK6009DPP |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | RJK6011DJA |
Renesas |
High Speed Power Switching MOS FET | |
9 | RJK6011DJE |
Renesas |
N-Channel Power MOSFET | |
10 | RJK6012DPE |
Renesas |
N-Channel Power MOSFET | |
11 | RJK6012DPP |
Renesas |
N-Channel Power MOSFET | |
12 | RJK6012DPP-A0 |
Renesas |
High Speed Power Switching MOSFET |