RJK6012DPP-A0 600V - 10A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Quality grade: Standard Outline RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 12 3 G S Datasheet R07DS1420EJ0102 Rev.1.02 Nov.15.2019 1. Gate .
Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C)
Low leakage current
High speed switching
Quality grade: Standard
Outline
RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA)
D
12 3
G S
Datasheet
R07DS1420EJ0102 Rev.1.02
Nov.15.2019
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
(Ta = 25 C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
30
V
Drain current
ID Note4
10
A
Drain peak current
ID (pulse)Note1
20
A
Body-drain diode reverse drain current
IDR
10
A
Body-drain diode .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6012DPP |
Renesas |
N-Channel Power MOSFET | |
2 | RJK6012DPE |
Renesas |
N-Channel Power MOSFET | |
3 | RJK6011DJA |
Renesas |
High Speed Power Switching MOS FET | |
4 | RJK6011DJE |
Renesas |
N-Channel Power MOSFET | |
5 | RJK6013DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
6 | RJK6013DPP |
Renesas |
N-Channel Power MOSFET | |
7 | RJK6013DPP-E0 |
Renesas |
N-Channel Power MOSFET | |
8 | RJK6014DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
9 | RJK6014DPK |
INCHANGE |
N-Channel MOSFET | |
10 | RJK6014DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
11 | RJK6015DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
12 | RJK6015DPK |
INCHANGE |
N-Channel MOSFET |