RJK6006DPP-E0 |
Part Number | RJK6006DPP-E0 |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C) High speed switching R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25C) Value 600 30 5 15 5 15 5 1.36 29 4.31 150 –55 to +150 Unit V V A A A A A mJ W C/W C C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Aval... |
Document |
RJK6006DPP-E0 Data Sheet
PDF 140.25KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6006DPP-A0 |
Renesas |
Power MOSFET | |
2 | RJK6006DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | RJK6002DJE |
Renesas |
MOS FET | |
4 | RJK6002DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | RJK6002DPE |
Renesas |
MOS FET |