RJK6002DPE - Renesas

RJK6002DPE MOS FET

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Features

 Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)
 Low drive current
 High density mounting R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperatur.