RJK6002DJE - Renesas

RJK6002DJE MOS FET

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Features

 Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching R07DS0845EJ0100 Rev.1.00 Jul 05, 2011 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D G 1. Source 2. Drain 3. Gate 32 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. Limited by Tc.