RJK6002DPD |
Part Number | RJK6002DPD |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | www.DataSheet4U.com RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 Features • Low on-resistance • Low leakage current • High speed switching O... |
Features |
• Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch... |
Document |
RJK6002DPD Data Sheet
PDF 97.47KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6002DPE |
Renesas |
MOS FET | |
2 | RJK6002DPH-E0 |
Renesas |
MOS FET | |
3 | RJK6002DJE |
Renesas |
MOS FET | |
4 | RJK6006DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | RJK6006DPP-A0 |
Renesas |
Power MOSFET |