RJK6002DJE |
Part Number | RJK6002DJE |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0845EJ0100 Rev.1.00 Jul 05, 2011 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D G 1. Source 2. Drain 3. Gate 32 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. Limited by Tc... |
Document |
RJK6002DJE Data Sheet
PDF 87.89KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6002DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
2 | RJK6002DPE |
Renesas |
MOS FET | |
3 | RJK6002DPH-E0 |
Renesas |
MOS FET | |
4 | RJK6006DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | RJK6006DPP-A0 |
Renesas |
Power MOSFET |