of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.
Low on-state resistance RDS(on) = 0.96 typ. (ID = 3 A, VGS = 10 V, Ta = 25C)
High speed switching R07DS0179EJ0100 Rev.1.00 Oct 05, 2010
Outline
RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A)
4 1. 2. 3. 4. Gate Drain Source Drain
D
G
12
3
S
Absolute Maximum Ratings
www.DataSheet.co.kr
(Ta = 25C)
Value 500 30 6 24 6 65 1.92 150
–55 to +150 Unit V V A A A W C/W C C
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK5033DPP-M0 |
Renesas |
High Speed Power Switching | |
2 | RJK5030DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | RJK5030DPP-M0 |
Renesas |
High Speed Power Switching | |
4 | RJK5031DPD |
Renesas |
N-Channel Power MOSFET | |
5 | RJK5032DPD |
Renesas |
MOS FET | |
6 | RJK5032DPH-E0 |
Renesas |
High Speed Power Switching | |
7 | RJK5035DPP-E0 |
Renesas |
N-Channel Power MOSFET | |
8 | RJK5036DP3-A0 |
Renesas |
MOS FET | |
9 | RJK5002DJE |
Renesas Technology |
High Speed Power Switching MOS FET | |
10 | RJK5003DPD |
Renesas Technology |
Silicon N Channel Power MOS FET | |
11 | RJK5009DPP |
Renesas Technology |
Silicon N Channel Power MOS FET | |
12 | RJK5012DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |