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RJK5033DPD - Renesas

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RJK5033DPD N-Channel Power MOSFET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.

Features


 Low on-state resistance RDS(on) = 0.96  typ. (ID = 3 A, VGS = 10 V, Ta = 25C)
 High speed switching R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25C) Value 500 30 6 24 6 65 1.92 150
  –55 to +150 Unit V V A A A W C/W C C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: .

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