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Low on-resistance RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)
Low drive current
High density mounting R07DS0840EJ0100 Rev.1.00 Jul 05, 2011
Outline
RENESAS Package code: PRSP0004ZB-A Package name: SOT-223
D
4 3 2 1 S G
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel temperature Storage temperature Symbol VDSS VGSS Note1 ID ID (pulse) Note1 IDR Note2 IDR (pulse) Tch Tstg.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK5030DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
2 | RJK5030DPP-M0 |
Renesas |
High Speed Power Switching | |
3 | RJK5031DPD |
Renesas |
N-Channel Power MOSFET | |
4 | RJK5032DPD |
Renesas |
MOS FET | |
5 | RJK5032DPH-E0 |
Renesas |
High Speed Power Switching | |
6 | RJK5033DPD |
Renesas |
N-Channel Power MOSFET | |
7 | RJK5033DPP-M0 |
Renesas |
High Speed Power Switching | |
8 | RJK5035DPP-E0 |
Renesas |
N-Channel Power MOSFET | |
9 | RJK5002DJE |
Renesas Technology |
High Speed Power Switching MOS FET | |
10 | RJK5003DPD |
Renesas Technology |
Silicon N Channel Power MOS FET | |
11 | RJK5009DPP |
Renesas Technology |
Silicon N Channel Power MOS FET | |
12 | RJK5012DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |