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RJK5036DP3-A0 - Renesas

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RJK5036DP3-A0 MOS FET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.

Features


 Low on-resistance RDS(on) = 3.83  typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)
 Low drive current
 High density mounting R07DS0840EJ0100 Rev.1.00 Jul 05, 2011 Outline RENESAS Package code: PRSP0004ZB-A Package name: SOT-223 D 4 3 2 1 S G 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel temperature Storage temperature Symbol VDSS VGSS Note1 ID ID (pulse) Note1 IDR Note2 IDR (pulse) Tch Tstg.

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