RJK5032DPD - Renesas

RJK5032DPD MOS FET

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Features

 Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)
 Low drive current
 High speed switching R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. S D G 12 3 Gate Drain Source Drain Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperatur.