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RJK5035DPP-E0 - Renesas

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RJK5035DPP-E0 N-Channel Power MOSFET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.

Features


 Low on-resistance RDS(on) = 0.715  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching R07DS0609EJ0100 Rev.1.00 Mar 19, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature N.

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