RJK5033DPD |
Part Number | RJK5033DPD |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
Low on-state resistance RDS(on) = 0.96 typ. (ID = 3 A, VGS = 10 V, Ta = 25C) High speed switching R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25C) Value 500 30 6 24 6 65 1.92 150 –55 to +150 Unit V V A A A W C/W C C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: ... |
Document |
RJK5033DPD Data Sheet
PDF 131.27KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | RJK5033DPP-M0 |
Renesas |
High Speed Power Switching | |
2 | RJK5030DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | RJK5030DPP-M0 |
Renesas |
High Speed Power Switching | |
4 | RJK5031DPD |
Renesas |
N-Channel Power MOSFET | |
5 | RJK5032DPD |
Renesas |
MOS FET |