www.DataSheet4U.com RJK5015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item.
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK5015DPM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
2 | RJK5012DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | RJK5012DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
4 | RJK5012DPP-A0 |
Renesas |
MOSFET | |
5 | RJK5012DPP-E0 |
Renesas |
MOS FET | |
6 | RJK5013DPE |
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Silicon N Channel Power MOS FET | |
7 | RJK5013DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | RJK5013DPP |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
9 | RJK5014DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
10 | RJK5014DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
11 | RJK5014DPP-E0 |
Renesas |
MOSFET | |
12 | RJK5018DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |