RJK5012DPP-E0 |
Part Number | RJK5012DPP-E0 |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0561EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage t... |
Document |
RJK5012DPP-E0 Data Sheet
PDF 103.80KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK5012DPP-A0 |
Renesas |
MOSFET | |
2 | RJK5012DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
3 | RJK5012DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | RJK5013DPE |
Renesas Technology |
Silicon N Channel Power MOS FET | |
5 | RJK5013DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |