RJK5015DPM - Renesas Technology

RJK5015DPM Silicon N Channel MOS FET High Speed Power Switching

www.DataSheet4U.com RJK5015DPM Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching REJ03G1753-0100 Rev.1.00 Oct 26, 2009 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to s.

Features

• Low on-resistance
• Low leakage current
• High speed switching REJ03G1753-0100 Rev.1.00 Oct 26, 2009 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 μs, duty cycle ≤ 1% Value.