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RJK2009DPM |
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| Part Number | RJK2009DPM |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0200 Rev.2.00 Aug.09.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package... |
| Features |
• Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings www.DataSheet4U.com (Ta = 25°C) Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 40 160 40 160 40 106 60 2.08 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current A... |
| Document |
 RJK2009DPM Data Sheet
PDF 122.95KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK2006DPE |
Renesas Technology |
Silicon N-Channel MOSFET |
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| 2 | RJK2006DPE |
INCHANGE |
N-Channel MOSFET |
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| 3 | RJK2006DPF |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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| 4 | RJK2006DPJ |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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| 5 | RJK2017DPP |
Renesas |
N-Channel Power MOSFET |
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