RD07MVS2 - Mitsubishi Electric Semiconductor

RD07MVS2 Silicon MOSFET Power Transistor

OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. 6.0+/-0.15 This device have an interal monolithic zener diode from gate to source for ESD protection. 4.9+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 1.0+/-0.05 2 FEATURES •High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz •High E.

Features

•High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
•High Efficiency: 60%typ. (175MHz)
•High Efficiency: 55%typ. (520MHz)
•Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm RoHS COMPLIANT RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How .