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RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 2 FEATURES High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25.
High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm APPLICATION For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets. RoHS COMPLIANT RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type sold.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD07MVS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor |
|
| 2 | RD07MVS1B |
Mitsubishi Electric Semiconductor |
Silicon RF Power MOSFET |
|
| 3 | RD07MVS2 |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |
|
| 4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance |
|
| 5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance |
|
| 6 | RD0106T |
Sanyo Semicon Device |
High-Speed Switching Diode |
|
| 7 | RD01MUS1 |
Mitsubishi Electric |
Silicon RF Power MOS FET |
|
| 8 | RD01MUS2 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor |
|
| 9 | RD01MUS2B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |
|
| 10 | RD02LUS2 |
Mitsubishi |
Silicon RF Power MOS FET |
|
| 11 | RD02MUS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor |
|
| 12 | RD02MUS1B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |
|