RD02LUS2 is a MOS FET type transistor designed for VHF/UHF RF driver device. OUTLINE DRAWING FEATURES 1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W 2.Integrated gate protection diode APPLICATION For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPL.
1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W 2.Integrated gate protection diode APPLICATION For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD02LUS2-501, T513 is EU RoHS compliant. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1. Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RD02MUS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor | |
2 | RD02MUS1B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor | |
3 | RD02MUS2 |
Mitsubishi Electric |
RoHS Compliance | |
4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance | |
5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance | |
6 | RD0106T |
Sanyo Semicon Device |
High-Speed Switching Diode | |
7 | RD01MUS1 |
Mitsubishi Electric |
Silicon RF Power MOS FET | |
8 | RD01MUS2 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor | |
9 | RD01MUS2B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor | |
10 | RD030100 |
Vishay Siliconix |
Tubular Capacitors | |
11 | RD045120 |
Vishay Siliconix |
Tubular Capacitors | |
12 | RD04HMS2 |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |