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RD07MVS2 |
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| Part Number | RD07MVS2 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. 6.0+/-0.15 This device have an interal monolithic zener diode from gate to ... |
| Features |
•High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz •High Efficiency: 60%typ. (175MHz) •High Efficiency: 55%typ. (520MHz) •Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm RoHS COMPLIANT RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How ... |
| Document |
 RD07MVS2 Data Sheet
PDF 273.14KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD07MVS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor |
|
| 2 | RD07MVS1B |
Mitsubishi Electric Semiconductor |
Silicon RF Power MOSFET |
|
| 3 | RD07MUS2B |
Mitsubishi Electric Semiconductor |
Silicon RF Power MOSFET |
|
| 4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance |
|
| 5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance |
|