RD07MVS1 - Mitsubishi Electric

RD07MVS1 Silicon MOSFET Power Transistor

RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 •High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz •High Efficiency: 60%typ. (175MHz) •High Efficiency: 55%typ. (520MHz) 2 APPLICATION For output stage of high powe.

Features

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0 Ta=+25°C Vds=10V Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm) 60 CHANNEL DISSIPATION Pch(W) 50 40 30 20 10 0 On PCB(
*1) 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) On PCB(
*1) with Heat-sink 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 Vds(V) 8 10 Vgs=5V Ta=+25°C Vgs=4.5V Vds VS. .