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www.DataSheet.co.kr Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free compliance. Specifications Absolute Ma.
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Diffused Junction Silicon Diode
Low VF
• High-Speed Switching Diode
High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 1 Sine wave 10ms 10 150 --55 to +150 Unit V A A °C °C
IO IFSM
Tj Tstg
Electrical Characteristics at Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD01MUS1 |
Mitsubishi Electric |
Silicon RF Power MOS FET |
|
| 2 | RD01MUS2 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor |
|
| 3 | RD01MUS2B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |
|
| 4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance |
|
| 5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance |
|
| 6 | RD02LUS2 |
Mitsubishi |
Silicon RF Power MOS FET |
|
| 7 | RD02MUS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor |
|
| 8 | RD02MUS1B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |
|
| 9 | RD02MUS2 |
Mitsubishi Electric |
RoHS Compliance |
|
| 10 | RD030100 |
Vishay Siliconix |
Tubular Capacitors |
|
| 11 | RD045120 |
Vishay Siliconix |
Tubular Capacitors |
|
| 12 | RD04HMS2 |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |
|