RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES •High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME 0.8 MIN 2.5+/-0.1 4.4+/-0.1 1.6+/-0.1 LOT N.
•High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME
0.8 MIN 2.5+/-0.1
4.4+/-0.1 1.6+/-0.1 LOT No.
1 0. φ
1.5+/-0.1
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
@Vdd=7.2V,f=527MHz
•Integrated gate protection diode APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANCE RD01MUS2B-101,T113 is a RoHS compliant products.
0.1 MAX
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This product includes the lead in high melting temperature type solders. However, i.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RD01MUS2 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor | |
2 | RD01MUS1 |
Mitsubishi Electric |
Silicon RF Power MOS FET | |
3 | RD0106T |
Sanyo Semicon Device |
High-Speed Switching Diode | |
4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance | |
5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance | |
6 | RD02LUS2 |
Mitsubishi |
Silicon RF Power MOS FET | |
7 | RD02MUS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor | |
8 | RD02MUS1B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor | |
9 | RD02MUS2 |
Mitsubishi Electric |
RoHS Compliance | |
10 | RD030100 |
Vishay Siliconix |
Tubular Capacitors | |
11 | RD045120 |
Vishay Siliconix |
Tubular Capacitors | |
12 | RD04HMS2 |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |