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RD07MUS2B |
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| Part Number | RD07MUS2B |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 2 FEATURES High power gai... |
| Features |
High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode.
3
(0.25) (0.25)
INDEX MARK (Gate)
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
APPLICATION
For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets.
RoHS COMPLIANT
RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type sold... |
| Document |
 RD07MUS2B Data Sheet
PDF 689.20KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | RD07MVS1 |
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| 2 | RD07MVS1B |
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| 4 | RD00HHS1 |
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| 5 | RD00HVS1 |
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