RD04LUS2 - Mitsubishi

RD04LUS2 Silicon RF Power MOSFET

RD04LUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gate protection diode. OUTLINE DRAWING APPLICATION For output stage of high power amplifiers in VHF/UHF-band mobile radio.

Features

High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gate protection diode. OUTLINE DRAWING APPLICATION For output stage of high power amplifiers in VHF/UHF-band mobile radio sets. RoHS COMPLIANT RD04LUS2-501, T512, T514 is EU RoHS compliant. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS VDSS Drain to source voltage VGS=0V 25 VGSS Gate to source voltage VDS=0V -5/+10 Pch
* Channel dissipation Tc=25°C 46 Pin Input Power Zg=Zl=50 0.8 Pout Output Power Zg=Zl.