RD 030100, RD 045120 Vishay Draloric Tubular Capacitors, Screw & Band Mounting RD 030100 7 KVP to 8 KVP ø 45 (1.772 DIA) 7.4 + 0.2 Holes (0.291 + 0.008) ø 45 (1.772 DIA) RD 045120 10 KVP to 11 KVP ø 65 (2.559 DIA) 6.4 + 0.2 (0.252 + 0.008) = = 100 ± 2 (3.937 ± 0.08) 12 ± 1 (0.472 ± 0.04) M10 Thread 43 (1.693) ø 30 (1.181 DIA) 34 ± 1 (1.339 ± 0.04) =.
30100 MODEL 8 KVP RATED VOLTAGE 1200 pF CAPACITANCE VALUE ± 20 % TOLERANCE R 85 CERAMIC www.vishay.com 1 For technical questions contact: [email protected] (0.04) 1.5 1.0 Document Number: 22111 Revision: 21-Feb-02 Datasheet pdf - http://www.DataSheet4U.co.kr/ 27 ± 1 (1.063 ± 0.04) 120 ± 2 (4.724 ± 0.08) 20 ± 0.1 (0.787 ± 0.008) 38 (1.496) 16 (0.630) RD 030100, RD 045120 Tubular Capacitors, Screw & Band Mounting Vishay Draloric RD 030100 CERAMIC CAPACITANCE VALUE [pF] 100 120 160 200 250 R 42 300 400 500 600 800 R 85 1000 1200 1500 7 8 8 30 30 8 30 30 RATED VOLTAGE [KVP] RATED POW.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RD04HMS2 |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor | |
2 | RD04LUS2 |
Mitsubishi |
Silicon RF Power MOSFET | |
3 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance | |
4 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance | |
5 | RD0106T |
Sanyo Semicon Device |
High-Speed Switching Diode | |
6 | RD01MUS1 |
Mitsubishi Electric |
Silicon RF Power MOS FET | |
7 | RD01MUS2 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor | |
8 | RD01MUS2B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor | |
9 | RD02LUS2 |
Mitsubishi |
Silicon RF Power MOS FET | |
10 | RD02MUS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor | |
11 | RD02MUS1B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor | |
12 | RD02MUS2 |
Mitsubishi Electric |
RoHS Compliance |