RD02MUS2 - Mitsubishi Electric

RD02MUS2 RoHS Compliance

RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 1 4.9+/-0.15 1.0+/-0.05 2 FEATURES •High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz.

Features

•High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz
•High Efficiency:65%typ.(175MHz)
•High Efficiency:65%typ.(520MHz)
•Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. RoHS COMPLIANT www.DataSheet4U.com RD02MUS2-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting tempera.