RD04LUS2 Mitsubishi Silicon RF Power MOSFET Datasheet, en stock, prix

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RD04LUS2

Mitsubishi
RD04LUS2
RD04LUS2 RD04LUS2
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Part Number RD04LUS2
Manufacturer Mitsubishi
Description RD04LUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=...
Features High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gate protection diode. OUTLINE DRAWING APPLICATION For output stage of high power amplifiers in VHF/UHF-band mobile radio sets. RoHS COMPLIANT RD04LUS2-501, T512, T514 is EU RoHS compliant. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS VDSS Drain to source voltage VGS=0V 25 VGSS Gate to source voltage VDS=0V -5/+10 Pch* Channel dissipation Tc=25°C 46 Pin Input Power Zg=Zl=50 0.8 Pout Output Power Zg=Zl...

Document Datasheet RD04LUS2 Data Sheet
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