PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov. 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Ty.
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• High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ
Pin Arrangement
3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
4
G
G
1
G
G
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 3 4 10
–30 to +100
–30 to +100 5 Unit V A V mW °C °C W
PF01411B
Electrical Characteristics (Tc = 25°C)
Item Frequency range Control voltage r.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PF01411A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
2 | PF01410A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Handy Phone | |
3 | PF01412A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
4 | PF0100 |
NXP |
14-channel configurable power management | |
5 | PF0100Z |
NXP |
14-channel configurable power management | |
6 | PF0121 |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Mobile Phone | |
7 | PF0010 |
Renesas Technology |
High Frequency Power MOS FET Module | |
8 | PF00105A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for AMPS Handy Phone | |
9 | PF0027 |
Renesas Technology |
MOS FET Power Amplifier Module | |
10 | PF0030 |
Hitachi Semiconductor |
MOS FET Power Amplifier | |
11 | PF0031 |
Hitachi |
MOS FET Power Amplifier Module | |
12 | PF0032 |
Hitachi Semiconductor |
MOS FET Power Amplifier |