PF00105A - Hitachi Semiconductor

PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone

PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features • • • • • Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND.

Features

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• Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ Pin Arrangement
• RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 1 4.5 20
  –30 to +100
  –30 to +100 2 Unit V A V mW °C °C W PF00105A Electrical Characteristics (Tc = 25°C) Item Frequency range Dra.