PF0031 - Hitachi

PF0031 MOS FET Power Amplifier Module

w w at .D w h FET Power Amplifier Module for Mobile Phone MOS S a ADE-208-461 (Z) 1st Edition July 1, 1996 ee U 4 t m o .c PF0031 Application PF0031: For NMT900 890 to 925 MHz Features • High stability: Load VSWR ≈ 20:1 • Low power control current: 400 µA • Thin package: 5 mm t Pin Arrangement • RF-B2 w w .D w 5 t a 1 S a 2 e h 3 t e 5 4 U 4.

Features

• High stability: Load VSWR ≈ 20:1
• Low power control current: 400 µA
• Thin package: 5 mm t Pin Arrangement
• RF-B2 w w .D w 5 t a 1 S a 2 e h 3 t e 5 4 U 4 .c m o 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND w w w .D a S a t e e h U 4 t m o .c PF0031 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 10 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line).