Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 15 5.1 Features . . . . . . . .
• Four to six buck converters, depending on configuration
• Single/Dual phase/ parallel options
• DDR termination tracking mode option
• Boost regulator to 5.0 V output
• Six general purpose linear regulators
• Programmable output voltage, sequence, and timing
• OTP (one time programmable) memory for device configuration
• Coin cell charger and RTC supply
• DDR termination reference voltage
• Power control logic with processor interface and event detection
• I2C control
• Individually programmable ON, OFF, and standby modes
POWER MANAGEMENT
EP SUFFIX (E-TYPE) 98ASA00405D 56 QFN 8X8
ES SUFF.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PF0100Z |
NXP |
14-channel configurable power management |
|
| 2 | PF0121 |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Mobile Phone |
|
| 3 | PF01410A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Handy Phone |
|
| 4 | PF01411A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
|
| 5 | PF01411B |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
|
| 6 | PF01412A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
|
| 7 | PF0010 |
Renesas Technology |
High Frequency Power MOS FET Module |
|
| 8 | PF00105A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for AMPS Handy Phone |
|
| 9 | PF0027 |
Renesas Technology |
MOS FET Power Amplifier Module |
|
| 10 | PF0030 |
Hitachi Semiconductor |
MOS FET Power Amplifier |
|
| 11 | PF0031 |
Hitachi |
MOS FET Power Amplifier Module |
|
| 12 | PF0032 |
Hitachi Semiconductor |
MOS FET Power Amplifier |
|