NXP Semiconductors Data sheet: Technical data Document Number: MMPF0100Z Rev. 13.0, 5/2023 14 channel configurable power management integrated circuit The SMARTMOS PF0100Z AEC Q100 grade 2 automotive power management integrated circuit (PMIC) provides a highly programmable/ configurable architecture, with fully integrated power devices and minimal external.
• Four to six buck converters, depending on configuration
• Single/dual phase/ parallel options
• DDR termination tracking mode option
• Boost regulator to 5.0 V output
• Six general purpose linear regulators
• Programmable output voltage, sequence, and timing
• OTP (one time programmable) memory for device configuration
• Coin cell charger and RTC supply
• DDR termination reference voltage
• Power control logic with processor interface and event detection
• I2C control
• Individually programmable on, off, and standby modes
PF0100Z
Automotive
POWER MANAGEMENT
ES SUFFIX (WF-TYPE) 98ASA00589D .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PF0100 |
NXP |
14-channel configurable power management | |
2 | PF0121 |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Mobile Phone | |
3 | PF01410A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Handy Phone | |
4 | PF01411A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
5 | PF01411B |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
6 | PF01412A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
7 | PF0010 |
Renesas Technology |
High Frequency Power MOS FET Module | |
8 | PF00105A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for AMPS Handy Phone | |
9 | PF0027 |
Renesas Technology |
MOS FET Power Amplifier Module | |
10 | PF0030 |
Hitachi Semiconductor |
MOS FET Power Amplifier | |
11 | PF0031 |
Hitachi |
MOS FET Power Amplifier Module | |
12 | PF0032 |
Hitachi Semiconductor |
MOS FET Power Amplifier |