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PF01411B |
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| Part Number | PF01411B |
| Manufacturer | Hitachi Semiconductor |
| Description | PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov. 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • Hi... |
| Features |
• • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 3 4 10 –30 to +100 –30 to +100 5 Unit V A V mW °C °C W PF01411B Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage r... |
| Document |
 PF01411B Data Sheet
PDF 26.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PF01411A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
|
| 2 | PF01410A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Handy Phone |
|
| 3 | PF01412A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
|
| 4 | PF0100 |
NXP |
14-channel configurable power management |
|
| 5 | PF0100Z |
NXP |
14-channel configurable power management |
|