PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features • Low power control current: 0.9 mA Typ • High speed switching: 1.5 µsec Typ • Wide power control range: 100 dB Typ Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Di.
• Low power control current: 0.9 mA Typ
• High speed switching: 1.5 µsec Typ
• Wide power control range: 100 dB Typ
Pin Arrangement
• RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND
PF0121
Internal Diagram and External Circuit
G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout
G GND
Z1
FB1
C2
FB2
C1
Z2
Pin
VAPC
VDD
Pout
C1 = 0.01 µF (Ceramic chip capacitor) C2 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line)
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current APC .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PF0100 |
NXP |
14-channel configurable power management | |
2 | PF0100Z |
NXP |
14-channel configurable power management | |
3 | PF01410A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Handy Phone | |
4 | PF01411A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
5 | PF01411B |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
6 | PF01412A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
7 | PF0010 |
Renesas Technology |
High Frequency Power MOS FET Module | |
8 | PF00105A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for AMPS Handy Phone | |
9 | PF0027 |
Renesas Technology |
MOS FET Power Amplifier Module | |
10 | PF0030 |
Hitachi Semiconductor |
MOS FET Power Amplifier | |
11 | PF0031 |
Hitachi |
MOS FET Power Amplifier Module | |
12 | PF0032 |
Hitachi Semiconductor |
MOS FET Power Amplifier |