PF0121 |
Part Number | PF0121 |
Manufacturer | Hitachi Semiconductor |
Description | PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features • Low power control current: 0.9 mA Typ • High sp... |
Features |
• Low power control current: 0.9 mA Typ • High speed switching: 1.5 µsec Typ • Wide power control range: 100 dB Typ Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 FB1 C2 FB2 C1 Z2 Pin VAPC VDD Pout C1 = 0.01 µF (Ceramic chip capacitor) C2 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current APC ... |
Document |
PF0121 Data Sheet
PDF 51.97KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PF0100 |
NXP |
14-channel configurable power management | |
2 | PF0100Z |
NXP |
14-channel configurable power management | |
3 | PF01410A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Handy Phone | |
4 | PF01411A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
5 | PF01411B |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone |