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PF0031 |
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| Part Number | PF0031 |
| Manufacturer | Hitachi |
| Description | w w at .D w h FET Power Amplifier Module for Mobile Phone MOS S a ADE-208-461 (Z) 1st Edition July 1, 1996 ee U 4 t m o .c PF0031 Application PF0031: For NMT900 890 to 925 MHz Features • High ... |
| Features |
• High stability: Load VSWR ≈ 20:1 • Low power control current: 400 µA • Thin package: 5 mm t Pin Arrangement • RF-B2 w w .D w 5 t a 1 S a 2 e h 3 t e 5 4 U 4 .c m o 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND w w w .D a S a t e e h U 4 t m o .c PF0031 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 10 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line)... |
| Document |
 PF0031 Data Sheet
PDF 81.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PF0030 |
Hitachi Semiconductor |
MOS FET Power Amplifier |
|
| 2 | PF0032 |
Hitachi Semiconductor |
MOS FET Power Amplifier |
|
| 3 | PF0010 |
Renesas Technology |
High Frequency Power MOS FET Module |
|
| 4 | PF00105A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for AMPS Handy Phone |
|
| 5 | PF0027 |
Renesas Technology |
MOS FET Power Amplifier Module |
|