PBHV9414Z - nexperia

PBHV9414Z PNP Transistor

PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • AEC-Q101 qualified 3. A.

Features

• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• AEC-Q101 qualified 3. Applications
• LED driver for LED chain module
• LCD backlighting
• Automotive motor management
• Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp ≤ 1 ms collector-emitter saturation resistance IC = -1 A; IB = -100 mA; pulsed; tp .