PBHV9115TLH - nexperia

PBHV9115TLH PNP Transistor

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115TLH 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Small SMD plastic package • AEC-Q101 qualif.

Features

• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• Small SMD plastic package
• AEC-Q101 qualified 3. Applications
• Power management
• LCD backlighting
• LED driver for LED chain module
• Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = -10 V; IC = -50 mA; Tamb = 25 °C Min Typ Max Unit - - -150 V --70 - -1 A -2 A 300 .