PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8215Z. 1.2 Features High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AE.
High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package 1.3 Applications LED driver for LED chain module LCD backlighting Automotive motor management Switch Mode Power Supply (SMPS) 1.4 Quick reference data www.DataSheet4U.com Table 1. Symbol VCEO IC hFE [1] Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = −10 V; IC = −100 mA [1] Conditions open base Min 100 Typ 180 Max −150.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBHV9040T |
NXP Semiconductors |
0.25A PNP high-voltage low VCEsat (BISS) transistor | |
2 | PBHV9040T |
nexperia |
PNP transistor | |
3 | PBHV9040X |
nexperia |
PNP Transistor | |
4 | PBHV9040Z |
nexperia |
PNP Transistor | |
5 | PBHV9050T |
NXP Semiconductors |
150mA PNP high-voltage low VCEsat (BISS) transistor | |
6 | PBHV9050Z |
nexperia |
PNP Transistor | |
7 | PBHV9115T |
NXP Semiconductors |
1 A PNP high-voltage low VCEsat (BISS) transistor | |
8 | PBHV9115TLH |
nexperia |
PNP Transistor | |
9 | PBHV9115X |
NXP |
1 A PNP high-voltage low VCEsat (BISS) transistor | |
10 | PBHV9115Z |
nexperia |
PNP Transistor | |
11 | PBHV9414Z |
nexperia |
PNP Transistor | |
12 | PBHV9515QA |
nexperia |
PNP Transistor |