PBHV9515QA - nexperia

PBHV9515QA PNP Transistor

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBHV8515QA. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability.

Features

• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• Low package height of 0.37 mm
• AEC-Q101 qualified
• Suitable for Automatic Optical Inspection (AOI) of solder joint 3. Applications
• LED driver for LED chain module
• High Intensity Discharge (HID) front lighting
• Automotive motor management
• Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current ga.