PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gai.
• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• AEC-Q101 qualified
3. Applications
• Electronic ballast for fluorescent lighting
• LED driver for LED chain module
• LCD backlighting
• High Intensity Discharge (HID) front lighting
• Automotive motor management
• Hook switch for wired telecom
• Switch mode power supply
4. Quick reference data
Table 1. Symbol VCESM
VCEO
IC hFE
Quick reference data Parameter
Conditions
collector-emitter peak VBE = 0 V voltage
collector-emitter vo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBHV9040T |
NXP Semiconductors |
0.25A PNP high-voltage low VCEsat (BISS) transistor | |
2 | PBHV9040T |
nexperia |
PNP transistor | |
3 | PBHV9040Z |
nexperia |
PNP Transistor | |
4 | PBHV9050T |
NXP Semiconductors |
150mA PNP high-voltage low VCEsat (BISS) transistor | |
5 | PBHV9050Z |
nexperia |
PNP Transistor | |
6 | PBHV9115T |
NXP Semiconductors |
1 A PNP high-voltage low VCEsat (BISS) transistor | |
7 | PBHV9115TLH |
nexperia |
PNP Transistor | |
8 | PBHV9115X |
NXP |
1 A PNP high-voltage low VCEsat (BISS) transistor | |
9 | PBHV9115Z |
nexperia |
PNP Transistor | |
10 | PBHV9215Z |
NXP Semiconductors |
2A PNP High-voltage Low VCEsat (BISS) Transistor | |
11 | PBHV9414Z |
nexperia |
PNP Transistor | |
12 | PBHV9515QA |
nexperia |
PNP Transistor |