PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115Z. 1.2 Features I High voltage I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I AEC-.
I High voltage I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I AEC-Q101 qualified 1.3 Applications I LED driver for LED chain module I LCD backlighting I High Intensity Discharge (HID) front lighting I Automotive motor management I Hook switch for wired telecom I Switch mode power supply 1.4 Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = −10 V; IC = −50 mA Min Typ Max Unit -.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBHV9115T |
NXP Semiconductors |
1 A PNP high-voltage low VCEsat (BISS) transistor | |
2 | PBHV9115TLH |
nexperia |
PNP Transistor | |
3 | PBHV9115X |
NXP |
1 A PNP high-voltage low VCEsat (BISS) transistor | |
4 | PBHV9040T |
NXP Semiconductors |
0.25A PNP high-voltage low VCEsat (BISS) transistor | |
5 | PBHV9040T |
nexperia |
PNP transistor | |
6 | PBHV9040X |
nexperia |
PNP Transistor | |
7 | PBHV9040Z |
nexperia |
PNP Transistor | |
8 | PBHV9050T |
NXP Semiconductors |
150mA PNP high-voltage low VCEsat (BISS) transistor | |
9 | PBHV9050Z |
nexperia |
PNP Transistor | |
10 | PBHV9215Z |
NXP Semiconductors |
2A PNP High-voltage Low VCEsat (BISS) Transistor | |
11 | PBHV9414Z |
nexperia |
PNP Transistor | |
12 | PBHV9515QA |
nexperia |
PNP Transistor |