PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC 1.3 Applica.
High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC 1.3 Applications LED driver for LED chain module LCD backlighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = −10 V; IC = −50 mA Conditions open base Min 100 Typ 220 Max −150 −1 Unit V A 2. Pinning information Table 2. Pin 1 2 3 Pin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBHV9115T |
NXP Semiconductors |
1 A PNP high-voltage low VCEsat (BISS) transistor | |
2 | PBHV9115TLH |
nexperia |
PNP Transistor | |
3 | PBHV9115Z |
nexperia |
PNP Transistor | |
4 | PBHV9040T |
NXP Semiconductors |
0.25A PNP high-voltage low VCEsat (BISS) transistor | |
5 | PBHV9040T |
nexperia |
PNP transistor | |
6 | PBHV9040X |
nexperia |
PNP Transistor | |
7 | PBHV9040Z |
nexperia |
PNP Transistor | |
8 | PBHV9050T |
NXP Semiconductors |
150mA PNP high-voltage low VCEsat (BISS) transistor | |
9 | PBHV9050Z |
nexperia |
PNP Transistor | |
10 | PBHV9215Z |
NXP Semiconductors |
2A PNP High-voltage Low VCEsat (BISS) Transistor | |
11 | PBHV9414Z |
nexperia |
PNP Transistor | |
12 | PBHV9515QA |
nexperia |
PNP Transistor |