P50NF06 - INCHANGE

P50NF06 N-Channel MOSFET

·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telec.

Features

s registered trademark isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 25A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 VSD Diode Forward Voltage IF= 50A; VGS= 0 P50NF06 MIN MAX UNIT 60 V 2 4 V 0.028 Ω ±100 nA 10 uA 2.0 V NOTICE： ISC reserves the rights to make changes of the content herein th.