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P50NF06 |
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| Part Number | P50NF06 |
| Manufacturer | INCHANGE |
| Description | ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variation... |
| Features |
s registered trademark
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 25A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 VSD Diode Forward Voltage IF= 50A; VGS= 0 P50NF06 MIN MAX UNIT 60 V 2 4 V 0.028 Ω ±100 nA 10 uA 2.0 V NOTICE： ISC reserves the rights to make changes of the content herein th... |
| Document |
 P50NF06 Data Sheet
PDF 223.05KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | P50N02LD |
Niko-Sem |
N-Channel MOSFET |
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| 2 | P50N02LS |
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N-Channel MOSFET |
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| 3 | P50N03LD |
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N-Channel MOSFET |
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| 4 | P50N03LDG |
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N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| 5 | P50N03LSG |
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N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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