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www.DataSheet4U.com STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATIN.
otal Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
Value STP50N06FI 60 60 ± 20 50 35 200 150 1 -65 to 175 175 27 19 200 45 0.3 2000
Unit
V V V A A A W W/o C V
o o
C C
(
•) Pulse width limited by safe operating area
July 1993
1/10
www.DataSheet4U.com
STP50N06/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 ISOWATT220 3.33
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Tempe.
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| 7 | P50N05L |
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